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The APTGF90TDU60PG is a triple dual common source Non Punch Through (NPT) IGBT power module manufactured by Microsemi Corporation. It features three phase legs with integrated anti-parallel diodes in an SP6-P package. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 110 A at Tc=25°C. Maximum power dissipation is rated at 416 W, with a junction-to-case thermal resistance of 0.3 °C/W for the IGBTs. The module includes Kelvin emitters for low-inductance drive connections and is designed for high-frequency operation up to 100 kHz.
Verify component authenticity through authorized Microsemi distributors or certified suppliers. Confirm datasheet revision status and RoHS compliance documentation prior to integration. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly to prevent damage to sensitive semiconductor structures.
Select this module for applications requiring high-frequency switching capabilities up to 100 kHz and robust thermal performance. Evaluate gate resistance requirements against switching energy loss curves to optimize efficiency. Consider the positive temperature coefficient of VCEsat for easy paralleling if higher current capacity is needed beyond the single unit rating.
This component belongs to the Thunderbolt IGBT E2 series from Microsemi, designed for high-power industrial applications. It utilizes Non Punch Through technology to ensure stable temperature behavior and ruggedness. The SP6-P package provides a low profile suitable for compact power electronics designs requiring high current density and reliable isolation.
Direct substitutes include APTGF90TA60P and APTGF90A60T. Verify pinout compatibility and thermal characteristics when replacing. Ensure the alternative part meets the same voltage and current ratings for the specific application requirements.