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The APTGL180A120T3AG is a silicon-based IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a dual configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 230 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter leakage current of 200 nA. Power dissipation is rated at 940 W, while the maximum gate-emitter voltage is 20 V. Operating temperatures range from -40°C to +100°C, and it utilizes screw mount installation.
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Select this module when a dual IGBT configuration is required for high-voltage applications. The 1.2 kV rating suits medium-power industrial systems. Consider the 230 A current capacity and 940 W thermal limits during circuit design. Ensure the cooling solution supports the specified operating temperature range of -40°C to +100°C.
This component belongs to the PM-IGBT-TFS-SP3F series from Microchip Technology. It is designed for general-purpose power switching applications requiring reliable performance in industrial environments. The SP3-32 package provides a standardized form factor for easy integration into existing power electronics designs.
Publicly confirmed substitute part numbers are not available in the provided source material.