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Product Detailed Parameters
- Description：IGBT MODULE 1200V 420A 1500W D3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：420 A
- Power - Max：1500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：18.6 nF @ 25 V
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Overview
The APTGL325A120D3G is a dual Field Stop Trench IGBT module from Microchip Technology, designed for high-efficiency power conversion. It features a 1200V collector-emitter voltage rating and a continuous collector current of 325A at 25°C. The device utilizes silicon technology with a D-3 package and screw mount configuration. Key electrical parameters include a maximum power dissipation of 1.5kW, a gate-emitter leakage current of 400nA, and an operating temperature range from -40°C to +100°C. This component is engineered for applications requiring robust performance in switched-mode power supplies and welding converters.
Feature Summary
- Field Stop Trench IGBT structure optimized for low switching losses
- Dual configuration within a compact D-3 module package
- High thermal stability suitable for demanding industrial environments
Applications
- Welding converters
- Switched-mode power supplies (SMPS)
- Industrial motor drives
Procurement Notes
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your system requirements. Confirm that the D-3 package dimensions and terminal configurations match your mechanical design constraints. Check for any recent product change notices or lifecycle status updates directly from Microchip Technology before finalizing procurement plans.
Selection Notes
Select this component when a 1200V rating and 325A continuous current capacity are required in a dual IGBT topology. Consider the D-3 package size and screw-mount installation method for your thermal management strategy. Ensure the gate drive circuitry supports the specified leakage currents and voltage limits for reliable operation in high-frequency switching applications.
Part Context
This part belongs to Microchip's PM-IGBT-TFS-D3 series, which integrates Field Stop Trench IGBTs into standardized modules. These modules are designed to replace discrete solutions, offering improved reliability and simplified assembly. The series targets high-power density applications where efficiency and thermal performance are critical design factors.
Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics if considering third-party equivalents. Ensure any substitute maintains the same voltage and current ratings to avoid system failure.
