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The APTGL475U120DAG is a single switch Trench Field Stop IGBT4 power module manufactured by Microchip Technology. It features an integrated series diode and utilizes silicon technology within the SP3F package configuration. The device supports a maximum collector-emitter voltage of 1200 V and operates with a continuous collector current of 475 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V, a gate-emitter leakage current of 1.5 µA, and a power dissipation rating of 1800 W. The module functions within a junction temperature range of -40°C to +175°C and employs screw mount installation.
Verify component authenticity through authorized Microchip Technology distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets prior to integration. Ensure supply chain stability due to potential long delivery times associated with industrial-grade power modules. Validate package specifications against application requirements before procurement.
Select this module for high-current applications requiring robust single-switch configurations. Compare saturation voltage and thermal resistance against alternative packages like SP1 or SP6C based on cooling constraints. Ensure gate drive circuits accommodate the specified 20 V maximum gate-emitter voltage limits for reliable operation.
This component belongs to the APTGL series of Trench Field Stop IGBT4 power modules from Microchip Technology. It represents a high-power discrete solution designed for demanding industrial environments. The series emphasizes efficiency and reliability through advanced silicon fabrication techniques.
Publicly confirmed substitute part numbers are not available in verified documentation. Evaluate equivalent models within the APTGL series such as APTGL475U120D4G for functional compatibility, ensuring package and pinout alignment.