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The APTGL60DDA120T3G is a dual IGBT module manufactured by Microchip Technology, designed for high-power switching applications. It features a Trench Field-Stop (TFS) technology architecture within an SP3 package configuration. The device supports a maximum collector-emitter voltage of 1200 V and provides a continuous collector current of 60 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V and a power dissipation rating of 400 W. The module operates within a junction temperature range of -40°C to +175°C and utilizes screw mount installation.
Verify the specific datasheet revision and package variant when sourcing, as Microchip may issue product change notifications that affect mechanical dimensions or electrical characteristics. Confirm RoHS compliance status directly from the manufacturer's official documentation prior to integration into regulated equipment designs.
Select this component for circuits requiring robust 1200 V blocking capability with moderate current handling. Ensure the thermal management system can dissipate up to 400 W of power loss while maintaining the junction temperature within the specified 175°C limit. Verify gate drive voltage compatibility with the standard 20 V maximum rating.
This part belongs to Microchip's APTGL series of discrete IGBT modules, which utilize advanced trench field-stop technology. The series is engineered for industrial power conversion, offering improved efficiency compared to older planar technologies. The SP3 package provides a standardized footprint for easy mounting on heatsinks in various power electronic assemblies.
Direct replacements must match the 1200 V / 60 A rating and SP3 package form factor. Consider variants like APTGL60H120T3G for single configurations or other TFS-based dual modules from the same family if pinout compatibility is required.