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The APTGL90DH120T3G is a single IGBT module from Microsemi Corporation, utilizing Trench Field Stop technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 110 A at 25°C. The device has a saturation voltage of 1.85 V and a power dissipation rating of 385 W. Input capacitance is 4.4 nF at 25 V, with a collector cutoff current of 250 µA. It operates within a temperature range of -40°C to +100°C and uses the SP3-32 package.
Verify the specific suffix 'T3G' against official Microchip documentation to confirm RoHS compliance and packaging details. Confirm that the SP3-32 package matches the mechanical requirements of the target assembly. Cross-reference the datasheet revision history to ensure all electrical parameters align with the intended design specifications before finalizing procurement orders.
Select this component when a single-channel IGBT with 1.2 kV blocking capability and 110 A current handling is required. The Trench Field Stop architecture supports efficient switching in demanding environments. Ensure the thermal management solution accommodates the 385 W dissipation rating and the specific thermal resistance characteristics of the SP3-32 package for reliable long-term operation.
This module belongs to the APTGL series of asymmetrical bridge trench plus field stop IGBT4 power modules. It represents Microsemi's focus on high-reliability discrete devices for aerospace and industrial sectors. The SP3-32 package provides a compact form factor suitable for screw-mount installations in various power electronics configurations.
Public confirmed substitute part numbers are not available in the provided source data.