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The APTGL90H120T3G is a silicon IGBT module from Microchip Technology, designed for high-speed power applications. It features a quad configuration with a maximum collector-emitter voltage of 1200V and a continuous collector current of 110A at 25°C. The device operates within a temperature range of -40°C to +100°C and has a power dissipation rating of 385W. Packaged in the SP3-32 screw-mount format, it utilizes Si technology and supports a maximum gate-emitter voltage of 20V.
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm that the received part matches the specific APTGL90H120T3G designation and packaging details. Ensure storage conditions comply with manufacturer guidelines to prevent moisture damage prior to soldering or assembly.
Select this module when a 1200V rating and 110A current capacity are required in a compact form factor. The SP3-32 package facilitates efficient thermal management via screw mounting. Consider the specific switching characteristics and thermal resistance values provided in the datasheet to ensure compatibility with the target circuit design and cooling infrastructure.
This component belongs to the Microchip Power IGBT module series, specifically utilizing the TFS (Thermal Flexible Structure) technology. The SP3 package family is engineered for high reliability and ease of integration into various power conversion topologies. It represents a solution for balancing performance and thermal efficiency in medium-power applications.
Consult official Microchip Technology documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current capabilities, and package dimensions before implementing any alternative components to ensure system integrity.