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The APTGLQ100A120T3AG is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a SP3-32 package designed for screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 185 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.05 V and a gate-emitter leakage current of 150 nA. The module handles a power dissipation of 650 W and operates within a temperature range of -40°C to +100°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific suffix T3AG against official Microchip documentation to confirm exact manufacturing lot specifications and compliance status. Ensure that the SP3-32 package dimensions match the target PCB or heatsink interface requirements before integration. Cross-reference the RoHS status directly with the latest datasheet revision to meet environmental regulations for the intended market deployment.
Select this component when a dual IGBT configuration is required for 1.2 kV applications with currents up to 185 A. The SP3-32 package is appropriate for screw-mount implementations where thermal management via baseplate cooling is feasible. Consider the 2.05 V saturation voltage for conduction loss calculations in efficiency-critical designs operating within the specified -40°C to +100°C range.
This part belongs to the APTGLQ series of IGBT modules from Microchip Technology, which are engineered for medium to high-power conversion tasks. The series utilizes advanced silicon trench field-stop technology to balance switching speed and conduction losses. The SP3 family of packages is widely recognized in industrial power electronics for its durability and standardized mounting footprint.
Consult Microchip's official cross-reference guides for direct replacements. Verify pin compatibility and thermal characteristics if substituting with other SP3 package variants or different manufacturers' 1.2 kV dual IGBT modules.