APTGLQ100A120TG

Overview

The APTGLQ100A120TG is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 170 A at 25°C. The saturation voltage is specified at 2.05 V, with a power dissipation rating of 520 W. The device operates within a temperature range of -40°C to +125°C and is housed in an SP4 package designed for screw mount installation.

Feature Summary

• Dual configuration for bridge or half-bridge applications
• High voltage capability suitable for industrial power conversion
• Integrated thermal management via screw mount packaging

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Medium frequency inverters

Procurement Notes

Verify the specific revision level against the official datasheet before integration. Confirm that the SP4 package dimensions match the target heatsink interface. Ensure gate drive requirements align with the specified maximum voltage limits to prevent device damage during operation.

Selection Notes

Select this component when a dual IGBT configuration with 1.2 kV blocking capability is required. The 170 A current rating supports high-power applications. Consider the SP4 package size and screw mounting method for mechanical compatibility with the system design constraints.

Part Context

This part belongs to the Microchip IGBT module portfolio, specifically designed for robust power switching. It represents a silicon-based solution distinct from the manufacturer's silicon carbide offerings. The dual configuration allows for efficient implementation of standard power topologies.

Replacement Considerations

Direct replacements must match the 1.2 kV rating, 170 A current capacity, and SP4 package footprint. Verify pinout compatibility and thermal resistance characteristics to ensure equivalent performance in the existing circuit layout.