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The APTGLQ150A120TG is a silicon IGBT module manufactured by Microchip Technology, housed in an SP4 package. It features a dual configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 250 A at 25°C. The saturation voltage is specified at 2.05 V, while the gate-emitter leakage current measures 240 nA. Power dissipation capability reaches 750 W, and the device operates within a temperature range from -40°C to +125°C.
Verify the specific suffix against official datasheets to confirm exact electrical characteristics and packaging details. Ensure compatibility with existing thermal management systems and gate drive requirements before integration into production designs.
Select this component when a dual IGBT configuration with 1.2 kV blocking capability is required. The 250 A current rating suits medium-power industrial applications. Verify that the SP4 package dimensions align with the intended heatsink and mechanical constraints.
This part belongs to Microchip's high-performance IGBT module portfolio, utilizing advanced field-stop technology. It is designed for robust operation in demanding power electronics environments, offering a balance of low conduction losses and reliable switching characteristics.
Consult official substitution guides for electrically equivalent modules. Verify pinout compatibility and thermal resistance values before replacing existing components in established designs.