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The APTGLQ200H120G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6C package. It features a full bridge configuration with a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 280 A at 25°C. The saturation voltage is 1.7 V, while the gate-emitter leakage current is limited to 500 nA. Power dissipation reaches 890 W, and the unit operates within a temperature range of -40°C to +100°C. Designed for screw mounting, it utilizes standard Si technology and weighs approximately 110 g.
Verify the exact suffix and revision level against the manufacturer's latest datasheet before ordering. Confirm that the SP6C package dimensions match the target heatsink interface. Ensure the gate drive circuitry supports the specified 20 V maximum rating. Cross-reference the part number with official Microchip distributors to avoid counterfeit components.
Select this component when a full bridge topology is required for 1.2 kV systems. Compare the 280 A current rating against peak load requirements. Evaluate the 1.7 V saturation voltage for conduction loss calculations. Consider the SP6C package size for PCB or chassis layout constraints. Verify thermal resistance values for heatsink design.
This module belongs to the APTGLQ series of high-speed IGBT4 modules from Microchip Technology. These components are engineered for efficiency in medium to high-power conversion systems. The SP6C packaging provides a standardized footprint for industrial integration. The series emphasizes low switching losses alongside robust short-circuit withstand capability.
Check Microchip's official substitution guide for direct replacements. Verify pin compatibility and thermal characteristics if considering alternative packages. Ensure voltage and current ratings meet or exceed original specifications.