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The APTGLQ200HR120G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6C package. It features a dual common emitter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 300 A at Tc=80°C. The saturation voltage is 2.05 V, while the power dissipation reaches 1 kW. Operating within a temperature range of -40°C to +100°C, it utilizes screw mount installation.
Verify the specific suffix against official documentation to confirm exact electrical characteristics and pinout compatibility. Confirm that the SP6C package dimensions match the intended mechanical layout. Ensure gate drive requirements align with the specified voltage limits before integration into the final assembly.
Select this component when a 1200 V rating and high current capacity are required for industrial applications. Consider the Trench 4 Fast technology for efficiency needs. Verify thermal interface material compatibility with the SP6C base plate to ensure reliable heat transfer during operation.
This module belongs to Microchip's Trench Field Stop series, designed for demanding power electronics. It integrates advanced silicon technology to provide superior switching characteristics compared to standard planar devices, suitable for high-power density applications.
Check datasheets for equivalent modules from other manufacturers offering similar 1200 V ratings and SP6C footprints. Verify pin-to-pin compatibility and thermal resistance values before substitution.