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The APTGLQ25H120T1G is a Trench Field Stop (TFS) IGBT module from Microchip Technology, configured as a full-bridge topology. It features a maximum collector-emitter voltage of 1200 V and a typical saturation voltage of 2.05 V. The continuous collector current is rated at 25 A at a case temperature of 80°C. Power dissipation is specified at 165 W. The device utilizes silicon technology and is housed in an SP1 package with screw mount installation. Operating junction temperature ranges from -40°C to 175°C.
Verify the specific ordering suffix and package variant against the official datasheet to ensure compatibility with the intended PCB or chassis mounting requirements. Confirm that the gate drive specifications align with the module's electrical characteristics before integration into the final design.
Select this component when a compact full-bridge solution is required for high-frequency applications. The TFS technology offers advantages in switching speed and low conduction losses compared to standard planar devices. Ensure the thermal management system can handle the 165 W power dissipation rating under the expected load conditions.
This part belongs to the APTGLQ series of IGBT modules, which are designed for high-performance power conversion. The series leverages Microchip's Trench Field Stop technology to deliver robust performance in demanding environments. The SP1 package provides a standardized form factor for easy integration into various power electronics designs.
Direct substitutes may include other APTGLQ series variants with different current ratings or package options. Verify pinout compatibility and electrical parameters such as VCES and IC before considering alternative part numbers from the same manufacturer family.
The maximum operating junction temperature is 175°C.
Yes, the APTGLQ25H120T1G is designed for screw mount installation using the SP1 package.