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The APTGLQ300H65G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP6 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 385 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 1 kW. Operating within a temperature range of -40°C to +100°C, it includes a gate-emitter leakage current of 500 nA and a maximum gate-emitter voltage of 20 V.
Verify the specific revision level and RoHS compliance status through official Microchip documentation before integration. Confirm that the SP6 mounting interface matches the thermal management design requirements. Ensure the supply chain source provides valid traceability records for this semiconductor component.
Select this module when a 650 V full bridge configuration is required with high current handling capabilities. The SP6 package suits applications needing screw-mount stability. Evaluate thermal resistance characteristics against the system's heat sink capacity to ensure operation remains within the specified junction temperature limits during peak loads.
This component belongs to the APTGLQ series of high-speed IGBT4 power modules from Microchip Technology. These modules are engineered for efficiency in medium-power applications. The SP6 form factor is standard for this product line, facilitating compatibility with existing industrial power electronics designs requiring reliable switching performance.
Direct substitutes include the APTGT300TL65G, which offers similar voltage ratings but different current and saturation characteristics. Verify pinout compatibility and thermal specifications before swapping components in existing assemblies.