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Product Detailed Parameters
- Description：IGBT MODULE 650V 70A 175W SP3F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：SP3F
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：70 A
- Power - Max：175 W
- Current - Collector Cutoff (Max)：50 µA
- Input Capacitance (Cies) @ Vce：3.1 nF @ 25 V
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Overview
The APTGLQ50TL65T3G is a silicon IGBT power module manufactured by Microchip Technology, housed in an SP3F screw-mount package. It features a three-level inverter configuration with Trench 3 Fast technology. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 175 W. The module operates within a temperature range of -40°C to +125°C.
Feature Summary
- Integrates Trench 3 Fast silicon IGBT technology for optimized switching performance.
- Designed specifically for three-level inverter circuit topologies.
- Utilizes the SP3F package format for standardized thermal and mechanical mounting.
Applications
- Three-level inverter systems
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific suffix 'T3G' against official Microchip documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the SP3F package dimensions match the target heatsink interface requirements before integration. Cross-reference the datasheet revision history to confirm that no product change notifications affect the pinout or electrical characteristics relative to existing designs.
Selection Notes
Select this component when a 650V rated IGBT module is required for three-level inverter architectures. The 50A continuous current rating and 1.85V saturation voltage define the conduction loss profile. Consider the SP3F footprint constraints and the -40°C to +125°C operating range to ensure compatibility with the system's thermal management strategy and environmental conditions.
Part Context
This part belongs to the Microchip APTGT series of high-power IGBT modules. These components are engineered for robust industrial applications requiring efficient power conversion. The SP3F package provides a compact solution for managing high currents while maintaining reliable thermal performance in demanding environments.
Replacement Considerations
Direct substitutes must maintain the 650V/50A rating, SP3F package, and three-level configuration. Verify pin compatibility and thermal resistance values. Consult Microchip for updated equivalents if discontinuation occurs.
FAQ
What is the specific silicon technology used in this module?
The APTGLQ50TL65T3G utilizes Trench 3 Fast silicon IGBT technology.
Is this module suitable for two-level inverters?
The datasheet specifies a three-level inverter configuration; suitability for other topologies requires separate engineering validation.
