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Product Detailed Parameters
- Description：IGBT MODULE 1200V 140A 595W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：140 A
- Power - Max：595 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：7.2 nF @ 25 V
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Overview
The APTGT100A120T3AG is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a dual configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 460 W. Operating within a temperature range of -40°C to +100°C, it utilizes screw mount installation and adheres to RoHS standards.
Feature Summary
- Dual IGBT configuration for half-bridge applications
- High voltage capability up to 1.2 kV
- Low saturation voltage for efficient conduction
- Robust thermal performance with 460 W dissipation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter systems
Procurement Notes
Verify the specific suffix T3AG against official Microchip documentation to confirm exact manufacturing lot attributes and compliance status. Confirm package integrity upon receipt, as the SP3-32 housing requires careful handling during screw-mount installation to ensure proper thermal interface and electrical isolation.
Selection Notes
Select this component when a 1.2 kV rating and 150 A continuous current are required in a compact SP3-32 form factor. Ensure the application environment stays within the specified -40°C to +100°C operating range. Verify that the gate drive circuitry supports the standard 20 V maximum gate-emitter voltage limits defined for this silicon IGBT technology.
Part Context
This module belongs to Microchip's PM-IGBT-TFS-SP3 series, designed for high-power switching applications. The SP3-32 package provides a standardized footprint for industrial power electronics, facilitating integration into existing thermal management systems while maintaining reliable electrical performance under high load conditions.
Replacement Considerations
Direct substitutes include other Microchip SP3-32 dual IGBT modules with matching 1.2 kV ratings, such as the APTGLQ100A120T3AG or APTGT150A120T3AG, provided current and thermal requirements align.
