SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT100DH120TG is a dual IGBT module from Microchip Technology, utilizing Trench Field Stop technology in an asymmetrical bridge configuration. It features a 1.2 kV collector-emitter voltage rating and a continuous collector current of 100 A at 25°C. The device has a saturation voltage of 1.7 V and a power dissipation capacity of 480 W. Packaged in the SP4 format with screw mount installation, it operates within a temperature range of -40°C to +100°C.
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm that the specific part number matches the required technical specifications before procurement. Ensure compliance with RoHS directives as indicated in the product documentation. Check for any recent production changes or obsolescence notices directly from the manufacturer.
Select this module for applications requiring robust high-voltage switching capabilities. Consider the SP4 package size and screw mounting requirements for mechanical integration. Evaluate thermal management solutions based on the 480 W power dissipation rating. Ensure gate drive circuits are compatible with the specified voltage limits.
This component belongs to the APTGT series of IGBT modules, designed for demanding power electronics environments. It represents Microchip's focus on reliable silicon-based power devices. The series is known for its balance of performance and ruggedness in industrial settings.
No public confirmed substitute part numbers are available in the provided data. Consult Microchip Technology for direct replacements or updated equivalents if this component becomes obsolete.