APTGT100DH60T3G

APTGT100DH60T3G

$27.64
  • Description:IGBT MODULE 600V 150A 340W SP3
  • Series:-

SKU:a6d150696277 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 150A 340W SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Asymmetrical Bridge
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):150 A
  • Power - Max:340 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:6.1 nF @ 25 V

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APTGT100DH60T3G

Overview

The APTGT100DH60T3G is a trench field-stop IGBT module manufactured by Microchip Technology. It features an asymmetrical bridge configuration within the SP4 package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The saturation voltage is specified as 1.9 V at 15 V gate drive and 100 A. Maximum power dissipation reaches 340 W, with a junction temperature range from -40°C to 175°C.

Feature Summary

  • Utilizes trench field-stop technology for optimized switching performance
  • Integrates an asymmetrical bridge topology for inverter applications
  • Includes an embedded NTC thermistor for thermal monitoring

Applications

  • Motor drives
  • Uninterruptible power supplies
  • Induction heating

Procurement Notes

Verify the manufacturer designation carefully, as the component is produced by Microchip Technology following historical acquisitions. Confirm the specific suffix T3G against official datasheets to ensure correct packaging and material compliance specifications before procurement.

Selection Notes

Select this module for high-power density designs requiring robust thermal management up to 175°C junction temperature. Ensure the gate driver provides a minimum 15 V turn-on voltage to achieve the rated 1.9 V saturation characteristic and optimal conduction efficiency.

Part Context

This component belongs to the APTGT series of discrete IGBT modules designed for industrial power conversion. It represents a transition from legacy Microsemi products to Microchip Technology's portfolio, maintaining established pinouts and mechanical dimensions for compatibility.

Replacement Considerations

Direct replacements include APTGT100DH60TG. Verify package integrity and electrical parameters against the latest Microchip datasheet to ensure functional equivalence in existing circuit layouts.

APTGT100DH60T3GAPTGT100DH60T3G
$27.64
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