SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT100DH60T3G is a trench field-stop IGBT module manufactured by Microchip Technology. It features an asymmetrical bridge configuration within the SP4 package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. The saturation voltage is specified as 1.9 V at 15 V gate drive and 100 A. Maximum power dissipation reaches 340 W, with a junction temperature range from -40°C to 175°C.
Verify the manufacturer designation carefully, as the component is produced by Microchip Technology following historical acquisitions. Confirm the specific suffix T3G against official datasheets to ensure correct packaging and material compliance specifications before procurement.
Select this module for high-power density designs requiring robust thermal management up to 175°C junction temperature. Ensure the gate driver provides a minimum 15 V turn-on voltage to achieve the rated 1.9 V saturation characteristic and optimal conduction efficiency.
This component belongs to the APTGT series of discrete IGBT modules designed for industrial power conversion. It represents a transition from legacy Microsemi products to Microchip Technology's portfolio, maintaining established pinouts and mechanical dimensions for compatibility.
Direct replacements include APTGT100DH60TG. Verify package integrity and electrical parameters against the latest Microchip datasheet to ensure functional equivalence in existing circuit layouts.