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The APTGT100H60T3G is a silicon IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 176 W. Gate-emitter leakage current is specified at 600 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C, and it utilizes screw mount installation.
Verify component authenticity through authorized Microchip Technology distributors or certified partners. Confirm RoHS compliance status and check for recent Product Change Notifications regarding assembly site or packaging modifications. Ensure supply chain integrity by validating documentation against official manufacturer records prior to acquisition.
Select this module for applications requiring a 600 V rated full bridge topology with 80 A current capacity. Evaluate thermal management requirements against the 176 W dissipation limit and ensure the SP3-32 package fits the mechanical constraints. Verify that the operating temperature range meets system specifications and confirm compatibility with standard gate drive voltages.
This component belongs to the APTGT series of high-speed IGBT modules designed for power conversion. It represents a specific variant within the SP3 package family, offering a balance of current handling and voltage blocking capabilities suitable for medium-power industrial electronics and renewable energy systems.
Cross-reference with other APTGT series modules sharing the SP3-32 package and 600 V/80 A ratings. Verify pinout compatibility and electrical parameters before substituting with alternative part numbers from the same manufacturer's portfolio.