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The APTGT100SK170TG is a silicon IGBT module manufactured by Microchip Technology, housed in the SP4 screw-mount package. It features a single configuration with a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a power dissipation rating of 312 W. Gate-emitter leakage is specified at 400 nA, with a maximum gate-emitter voltage of 20 V. Operating temperatures range from -40°C to +100°C.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official datasheets before integration. Ensure storage conditions adhere to manufacturer guidelines to maintain reliability. Validate package integrity upon receipt to prevent mechanical damage during installation.
Select this module for high-voltage applications requiring 1.7 kV blocking capability. The 75 A current rating suits moderate power levels where the SP4 package provides adequate thermal dissipation. Verify that the system operates within the specified -40°C to +100°C temperature range for optimal performance.
This component belongs to the APTGT series of trench field-stop IGBT modules. It shares the SP4 package form factor with other variants like APTGT50SK170TG but offers distinct electrical characteristics tailored for specific voltage and current requirements within the Microchip portfolio.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology directly for qualified alternatives or cross-reference options based on exact electrical and mechanical specifications.