APTGT150A120TG

Overview

The APTGT150A120TG is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 220 A at 25°C. The saturation voltage is specified at 1.7 V, with a power dissipation rating of 690 W. The device operates within a temperature range of -40°C to +125°C and has a maximum gate-emitter voltage of 20 V. It employs an SP4 screw-mount package and weighs approximately 110 g.

Feature Summary

• Dual configuration for bridge applications
• Screw mount installation style
• Silicon-based construction

Applications

• Industrial motor drives
• Power supplies
• Inverters

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct variant selection. Confirm RoHS compliance status through the manufacturer's datasheet or environmental declaration. Check for any recent Product Change Notices that may affect specifications or availability before finalizing procurement plans.

Selection Notes

Select this component for designs requiring a 1.2 kV rated dual IGBT in an SP4 package. Ensure the thermal management system can handle the 690 W power dissipation and maintain junction temperatures within the -40°C to +125°C operating range. Verify that the drive circuit supports the 20 V maximum gate-emitter voltage limit.

Part Context

This part belongs to the Microchip IGBT module family, specifically designed for high-power switching applications. It is distinct from single configurations like the APT150GN120J and other voltage ratings such as the 600 V APTGT150A60T1G. The SP4 package provides a standardized form factor for industrial mounting solutions.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Evaluate alternatives based on matching VCEO, Ic, and package dimensions. Consider the APTGT150DA120G for similar voltage/current ratings but verify pinout compatibility.