APTGT150A60T3AG

Overview

The APTGT150A60T3AG is a silicon-based IGBT module manufactured by Microchip Technology. It features a dual configuration housed in an SP3-32 screw-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 220 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 833 W. The unit operates within a temperature range of -40°C to +100°C with a maximum gate-emitter voltage of 20 V.

Feature Summary

• Dual IGBT configuration for bridge applications
• High-voltage capability up to 1.2 kV
• Screw-mount installation style

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before integration into regulated equipment designs.

Selection Notes

Select this component when a dual IGBT topology requires 1.2 kV blocking voltage. Ensure the application can accommodate the 833 W power dissipation limit and that the mounting hardware supports the SP3-32 package dimensions and screw-mount requirements.

Part Context

This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. It shares the SP3-32 packaging family with other high-power devices but is distinguished by its 1.2 kV voltage rating and dual configuration, differentiating it from lower-voltage single or three-phase variants.

Replacement Considerations

Direct substitutes must match the 1.2 kV rating, 220 A current, and SP3-32 package. Verify pin compatibility and thermal resistance values before swapping with other manufacturers' dual IGBT modules.