APTGT150DU120G

Overview

The APTGT150DU120G is a dual common emitter IGBT power module manufactured by Microchip Technology. It utilizes the PM-IGBT-TFS-SP6C package and operates with a maximum collector-emitter voltage of 1200 V. The device supports a continuous collector current of 300 A at 25°C and features a saturated collector-emitter voltage of 1.9 V. Maximum power dissipation is rated at 777 W, with an operating temperature range spanning from -40°C to +150°C junction temperature.

Feature Summary

• Dual common emitter configuration for bridge leg applications
• Trench Field Stop (TFS) technology for optimized switching performance
• High thermal efficiency within the SP6C module format

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Inverter circuits

Procurement Notes

Verify the specific suffix G against official Microchip documentation to confirm RoHS compliance status. Confirm the SP6C package dimensions and pinout compatibility with existing heatsink designs before procurement. Ensure gate drive requirements align with the specified Vge limits.

Selection Notes

Select this component for high-voltage applications requiring 1200 V blocking capability. The 300 A current rating suits medium-power industrial systems. Compare the 1.9 V saturation voltage against system conduction loss targets. Evaluate the 777 W power dissipation limit against thermal management capabilities.

Part Context

This module belongs to the APTGT series of high-voltage IGBT modules. It shares the SP6C package form factor with other variants in the lineup. The TFS technology distinguishes it from older planar IGBT generations. It serves as a discrete power switching solution for demanding electrical environments.

Replacement Considerations

Direct replacements include the APTGT150DA120G and APTGLQ150H120G. Verify pinout compatibility and thermal resistance values when substituting. Confirm that the alternative part meets the same 1200 V and 300 A specifications.