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The APTGT150DU120TG is a dual common emitter IGBT power module manufactured by Microchip Technology. It utilizes silicon technology and features the SP6C package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 220 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a maximum power dissipation of 690 W. The unit operates within a temperature range of -40°C to +100°C and weighs approximately 110 g.
Verify the specific suffix against official Microchip documentation to confirm exact pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notification. Ensure the ordering quantity aligns with factory packaging requirements. Cross-reference the Mouser part number 494-APTGT150DU120G if the TG suffix denotes a specific regional variant or packaging update.
Select this component when a 1.2 kV rating and 220 A continuous current are required in a compact SP6C form factor. Compare the 1.7 V saturation voltage against system efficiency targets. Verify that the +100°C maximum operating temperature meets the thermal management design constraints. Ensure the screw mount style matches the existing mechanical assembly infrastructure.
This module belongs to the APTGT series of high-power IGBT modules from Microchip Technology. It shares the SP6C package family with variants like the APTGT150DA120G and APTGT150DU120G. These devices are designed for medium to high-power industrial applications requiring robust insulation and reliable thermal performance.
The APTGT150DU120G is a closely related variant within the same package family. Verify if the suffix difference implies a change in internal die specification or packaging material before substitution.