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The APTGT150H170G is a Trench Field Stop (TFS) IGBT module manufactured by Microsemi Corporation. It features a full-bridge inverter configuration housed in an SP6 chassis mount package. The device supports a collector-emitter maximum voltage of 1700 V and delivers a continuous collector current of 250 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a power dissipation rating of 890 W, and a gate-emitter leakage current of 350 µA. The module operates within a temperature range of -40°C to +150°C.
Verify component authenticity through authorized Microchip Technology distributors. Confirm that the specific revision matches the required datasheet version. Ensure proper handling procedures are followed due to the sensitivity of semiconductor junctions. Check for any recent product change notices regarding packaging or material composition updates before finalizing orders.
Select this module when a 1700 V rating and 250 A current capacity are required for full-bridge topologies. The SP6 package provides a balance of current density and thermal resistance suitable for chassis mounting. Consider the 1.7 V saturation voltage for efficiency calculations in high-current scenarios compared to standard planar technologies.
This component belongs to the APTGT series of Trench Field Stop IGBT modules from Microsemi. It represents a high-performance discrete power solution designed to replace older planar technologies in demanding industrial environments. The SP6 package is a standard form factor within the company's portfolio for medium-to-high power inverter applications.
Direct substitutes may include other 1700V full-bridge modules in the SP6 package from the same manufacturer family, such as the APTGT150H170TG if available. Cross-referencing pinouts and thermal characteristics is essential when considering alternatives from different vendors.