APTGT200A60TG

APTGT200A60TG

$52.30
  • Description:IGBT MODULE 600V 290A 625W SP4
  • Series:-

SKU:8923a2b0e913 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 290A 625W SP4
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 200A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP4
  • Supplier Device Package:SP4
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):290 A
  • Power - Max:625 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:12.3 nF @ 25 V

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APTGT200A60TG

Overview

The APTGT200A60TG is a Trench + Field Stop IGBT power module manufactured by Microchip Technology. It features a single configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 290 A at 25°C. The saturation voltage is 1.5 V, while the gate-emitter leakage current is limited to 400 nA. Maximum power dissipation reaches 750 W, housed in an SP3-32 screw-mount package. Operating temperatures range from -40°C to +100°C.

Feature Summary

  • Trench + Field Stop IGBT technology for low voltage drop and soft recovery parallel diodes
  • Kelvin emitter design for easy drive and very low stray inductance
  • Internal thermistor for temperature monitoring
  • Rated for avalanche energy, RBSOA, and SCSOA

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate differences in packaging or internal components. Confirm RoHS compliance status directly with the manufacturer before integration. Ensure thermal interface materials are compatible with the SP3-32 package requirements for optimal heat transfer.

Selection Notes

Select this component for applications requiring high switching frequencies up to 20 kHz and stable temperature behavior. The symmetrical design and lead frames facilitate robust power connections. Consider the 600V rating and 290A current capacity when designing circuits for industrial power conversion systems.

Part Context

This module belongs to the APTGT series of insulated gate bipolar transistors. It utilizes silicon technology and is designed for high-efficiency power switching. The product line emphasizes low tail current and low leakage characteristics for improved system performance.

Replacement Considerations

Check for direct substitutes within the same voltage and current ratings. Verify pin compatibility and thermal resistance values. Ensure any replacement maintains the Trench + Field Stop architecture for equivalent switching speeds.

APTGT200A60TGAPTGT200A60TG
$52.30
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