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The APTGT200A60TG is a Trench + Field Stop IGBT power module manufactured by Microchip Technology. It features a single configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 290 A at 25°C. The saturation voltage is 1.5 V, while the gate-emitter leakage current is limited to 400 nA. Maximum power dissipation reaches 750 W, housed in an SP3-32 screw-mount package. Operating temperatures range from -40°C to +100°C.
Verify the specific suffix against official documentation, as variations may indicate differences in packaging or internal components. Confirm RoHS compliance status directly with the manufacturer before integration. Ensure thermal interface materials are compatible with the SP3-32 package requirements for optimal heat transfer.
Select this component for applications requiring high switching frequencies up to 20 kHz and stable temperature behavior. The symmetrical design and lead frames facilitate robust power connections. Consider the 600V rating and 290A current capacity when designing circuits for industrial power conversion systems.
This module belongs to the APTGT series of insulated gate bipolar transistors. It utilizes silicon technology and is designed for high-efficiency power switching. The product line emphasizes low tail current and low leakage characteristics for improved system performance.
Check for direct substitutes within the same voltage and current ratings. Verify pin compatibility and thermal resistance values. Ensure any replacement maintains the Trench + Field Stop architecture for equivalent switching speeds.