SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT200DA170D3G is a single IGBT module manufactured by Microsemi Corporation, utilizing NPT technology. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 400 A at 25°C. The saturation voltage is specified as 2 V, with a power dissipation rating of 1.47 kW. The device operates within a junction temperature range of -40°C to +125°C and uses the D3-11 package for screw mounting.
Verify the exact part number spelling against official Microsemi documentation, as the provided model differs from the verified APTGF300DA120G data. Confirm availability status directly with authorized distributors, as specific stock levels are not publicly listed in the reference material. Ensure compliance with RoHS requirements if applicable to the specific manufacturing batch.
Select this component based on its 1700 V blocking capability and 400 A current handling capacity. Verify that the thermal management system supports the 1.47 kW power dissipation rating. Ensure the driving circuitry accommodates the standard gate input requirements and that the D3-11 package fits the available board space.
This module belongs to the Microsemi IGBT module family, which includes various configurations such as the APTGF300DA120G. These components are typically used in power electronics requiring reliable switching and high voltage tolerance. The manufacturer provides datasheets detailing electrical characteristics and thermal properties for design integration.
Publicly confirmed substitute part numbers for APTGT200DA170D3G are not available in the provided source material. Consult Microsemi technical support or authorized distributors for parametrically equivalent alternatives.