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The APTGT200DA60T3AG is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 290 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 750 W, with a maximum gate-emitter voltage of 20 V. The component operates within a temperature range of -40°C to +100°C and is housed in an SP3-32 package designed for screw mount installation.
Verify the complete part number including suffixes against official Microchip Technology documentation before procurement. Confirm that the specific revision matches project requirements. Check for any recent product change notices or datasheet updates that may affect electrical characteristics or mechanical dimensions. Ensure compatibility with existing thermal management solutions.
Select this module for applications requiring a single high-current switch with 600 V blocking capability. Evaluate thermal resistance and heat sink compatibility given the 750 W power dissipation rating. Consider the operating temperature range limits when designing enclosure ventilation. Verify gate drive voltage levels do not exceed the 20 V maximum specification.
This component belongs to the Microchip Technology APTGT series of IGBT modules. These modules are designed for power conversion applications requiring robust switching performance. The series utilizes trench field-stop technology to optimize conduction and switching losses. The SP3 package family provides standardized mounting interfaces for various power ratings within the lineup.
Direct replacements must match the 600 V rating, 290 A current capacity, and SP3-32 package footprint. Verify pinout compatibility and thermal interface specifications. Consult Microchip Technology for qualified alternative part numbers within the same product family.