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Product Detailed Parameters
- Description：IGBT MODULE 1200V 280A 890W SP6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：280 A
- Power - Max：890 W
- Current - Collector Cutoff (Max)：350 µA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The APTGT200H120G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP6 screw-mount package. It features a full bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 280 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 890 W. Operating within a temperature range of -40°C to +100°C, it includes a gate-emitter leakage current of 500 nA and a maximum gate-emitter voltage of 20 V.
Feature Summary
- Full bridge topology for integrated power conversion stages
- High thermal stability supporting operation up to 100°C
- Screw-mount mechanical interface for secure installation
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter systems
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6 package dimensions and mounting hole patterns match the target design requirements. Ensure thermal interface material selection aligns with the specified power dissipation limits to maintain safe operating temperatures during continuous operation.
Selection Notes
Select this component when a single-phase full bridge configuration is required within the SP6 form factor. Compare the 1.2 kV voltage rating against system bus voltages to ensure adequate headroom. Evaluate the 280 A current capability against peak load demands and consider the 1.7 V saturation voltage impact on conduction losses relative to alternative modules in the same series.
Part Context
This part belongs to the APTGT series of high-power IGBT modules from Microchip Technology. It shares the SP6 package footprint with other variants like the APTGT200SK120G, though configurations differ. The series targets industrial applications requiring robust switching performance and standardized mechanical integration for heat sink mounting.
Replacement Considerations
The APTGT200SK120G offers identical electrical ratings and packaging but utilizes a single configuration instead of a full bridge. Verify circuit topology compatibility before substitution. No other direct pin-for-pin replacements are confirmed in public documentation.
