APTGT200H60G

Overview

The APTGT200H60G is a full-bridge IGBT power module manufactured by Microchip Technology, utilizing Trench + Field Stop technology. It features a 600 V collector-emitter breakdown voltage and supports continuous collector currents of 290 A at 25°C case temperature and 200 A at 80°C. The device has a maximum power dissipation of 625 W at 25°C and operates within a junction temperature range of -40°C to 175°C. Packaged in an isolated SP6 housing with screw mounting, it includes integrated soft recovery parallel diodes and Kelvin emitter connections for low stray inductance.

Feature Summary

• Trench + Field Stop IGBT technology providing low voltage drop and low tail current
• Soft recovery parallel diodes with low forward voltage and leakage current
• Kelvin emitter configuration for simplified gate drive requirements
• Symmetrical design with M5 power connectors ensuring very low stray inductance

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control systems

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement, as component specifications may be subject to change without notice. Confirm that the SP6 package dimensions and mounting torque requirements align with the target heatsink interface. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation to prevent damage to the sensitive semiconductor components.

Selection Notes

Select this module for applications requiring high current density and robust reverse bias safe operating area performance. The positive temperature coefficient of VCE(sat) facilitates easy paralleling of multiple units for higher power capacity. Consider the thermal resistance characteristics and available cooling methods to maintain the junction temperature within the specified operational limits under varying load conditions.

Part Context

This component belongs to the APTGT series of full-bridge IGBT modules from Microchip Technology. It is designed for medium-frequency switching applications up to 20 kHz. The module integrates four IGBTs and four anti-parallel diodes into a single isolated package, offering a compact solution for power inversion and conversion circuits compared to discrete component implementations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' modules. Ensure any replacement maintains the same SP6 package outline and isolation voltage specifications to fit existing mechanical designs.