SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT225DA170G is a dual IGBT module manufactured by Microchip Technology, formerly Microsemi. It utilizes NPT (Non-Punch Through) technology and is housed in an SP6 package designed for screw mounting. The device features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 340 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V, a gate-emitter leakage current of 600 nA, and a power dissipation rating of 1.25 kW. The module operates within a temperature range of -40°C to +100°C and has a unit weight of 110 g.
Verify the manufacturer designation carefully, as the component is listed under both Microsemi Corporation and Microchip Technology due to corporate acquisition history. Confirm the specific suffix 'G' indicates lead-free compliance if required by your assembly process. Cross-reference the datasheet revision date to ensure compatibility with your system's thermal and electrical requirements before finalizing procurement orders.
Select this module when a dual IGBT configuration with 1.7 kV blocking capability is required. Ensure the cooling solution supports the 1.25 kW power dissipation rating. Verify that the drive circuitry can handle the specified gate-emitter voltage limits. Compare the SP6 package dimensions against your PCB or chassis layout constraints to confirm mechanical fitment.
This component belongs to the APTGT series of high-power IGBT modules from Microchip Technology. The series is characterized by robust NPT technology suitable for demanding industrial environments. The SP6 package is a standard form factor used across various voltage ratings within the product line, facilitating modular design approaches in power electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other APTGT series modules with similar voltage and current ratings, ensuring package compatibility and electrical parameter alignment.