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The APTGT225SK170G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology within the SP6 screw-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 250 A at 25°C. The device exhibits a saturated collector-emitter voltage of 2 V and a power dissipation capacity of 890 W. Operating parameters include a gate-emitter leakage current of 600 nA, a maximum gate-emitter voltage of 20 V, and a functional temperature range from -40°C to +100°C.
Verify the exact part number against official documentation, as the specific suffix SK170G may indicate distinct manufacturing revisions or regional variants compared to similar models like DU170G. Confirm RoHS compliance status and lead times directly with authorized distributors, as supply chain data fluctuates. Ensure the ordering information matches the required electrical specifications for the target application design.
Select this component based on its 1.7 kV blocking capability and 250 A current rating for medium-to-high power systems. Evaluate the thermal management requirements given the 890 W power dissipation limit in the SP6 package. Compare against alternative configurations such as dual modules if circuit topology requires complementary switching pairs within a single footprint.
This module belongs to the APTGT series of insulated gate bipolar transistors produced by Microchip Technology. The series utilizes advanced silicon planar trench gate technology to deliver improved switching characteristics and lower conduction losses. The SP6 package provides a standardized form factor for integration into various industrial power conversion platforms.
The APTGT150SK170G serves as a verified substitute within the same series, offering identical 1.7 kV voltage ratings and SP6 packaging but with a reduced continuous collector current of 250 A. Verify pinout compatibility and thermal resistance parameters before implementation.