APTGT25X120T3G

APTGT25X120T3G

$63.80
  • Description:IGBT MODULE 1200V 40A 156W SP3
  • Series:-

SKU:2ee1fd23e2b5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 40A 156W SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 25A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):40 A
  • Power - Max:156 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.8 nF @ 25 V

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APTGT25X120T3G

Overview

The APTGT25X120T3G is a Trench Field Stop IGBT module manufactured by Microchip Technology. It features a three-phase inverter configuration housed in an SP3F package. The device supports a maximum collector-emitter breakdown voltage of 1200 V and operates with a saturation voltage of 1.7 V. Rated for continuous current up to 40 A, it dissipates 156 W of power. The module utilizes screw mount installation and functions within a temperature range of -40°C to +100°C.

Feature Summary

  • Utilizes Trench Field Stop technology for optimized switching performance
  • Designed specifically for three-phase inverter applications
  • Integrates high-voltage capability with low saturation voltage

Applications

  • Three-phase motor drives
  • Industrial inverters
  • Power conversion systems

Procurement Notes

Verify the specific suffix 'T3G' against official Microchip documentation to confirm RoHS compliance and tape-and-reel packaging details. Ensure the SP3F package variant matches thermal requirements. Cross-reference datasheet revisions to confirm active status and pinout consistency before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust 1200 V blocking capability and moderate current handling. The Trench Field Stop architecture offers efficiency benefits over standard IGBTs. Verify that the 156 W power dissipation rating aligns with the system's thermal management design and heatsink capabilities for reliable operation.

Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the IGBT modules category. It represents a solution for medium-power industrial electronics, combining silicon-based trench technology with standardized mounting formats to facilitate integration into existing power electronic designs.

Replacement Considerations

Consult official substitution guides for direct equivalents. Generic replacements may differ in thermal resistance or gate charge characteristics. Verify compatibility with existing driver circuits when considering alternative models from other manufacturers.

APTGT25X120T3GAPTGT25X120T3G
$63.80
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