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Product Detailed Parameters
- Description：IGBT MODULE 1200V 440A 1250W D3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：D-3 Module
- Supplier Device Package：D3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：440 A
- Power - Max：1250 W
- Current - Collector Cutoff (Max)：8 mA
- Input Capacitance (Cies) @ Vce：20 nF @ 25 V
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Overview
The APTGT300A120D3G is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon technology and housed in a D3-11 screw-mount package. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 440 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 1.45 kW, with an operating temperature range spanning from -40°C to +125°C. The maximum gate-emitter voltage is specified at 20 V.
Feature Summary
- Dual configuration for half-bridge applications
- High thermal performance with 1.45 kW power dissipation rating
- Robust mechanical design via screw mount installation
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'D3G' against official Microchip documentation to confirm the exact pinout and internal diode characteristics associated with this variant. Ensure that the D3-11 package dimensions match the target PCB layout and heatsink interface requirements before finalizing procurement orders.
Selection Notes
Select this component when a 1.2 kV rating and 440 A continuous current capacity are required within a dual IGBT topology. Consider the 1.7 V saturation voltage for conduction loss calculations and verify that the system's thermal management can handle the 1.45 kW dissipation limit under worst-case operating conditions.
Part Context
This part belongs to the APTGT series of high-speed IGBT modules from Microchip Technology. These modules are designed for demanding power conversion applications requiring fast switching speeds and low losses. The D3-11 package provides a standardized form factor for integration into various industrial power electronics platforms.
Replacement Considerations
Direct replacements must match the 1.2 kV / 440 A / Dual specification and D3-11 package. Verify electrical parameters such as Vce(sat) and switching times against the original datasheet to ensure compatibility with existing gate drive circuits and thermal designs.
