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The APTGT300A170D3G is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.7 kV and a continuous collector current of 400 A at 25°C. The saturation voltage is specified at 2 V, with a gate-emitter leakage current of 400 nA. Maximum power dissipation reaches 1.47 kW, while the gate-emitter maximum voltage is limited to 20 V. The device operates within a temperature range of -40°C to +125°C and utilizes a D3-11 screw mount package.
Verify component authenticity through authorized Microchip distributors or certified partners. Confirm RoHS compliance status and check for Product Change Notifications prior to procurement. Ensure supply chain integrity to avoid counterfeit components in critical power electronics assemblies.
Select this module for high-power applications requiring 1.7 kV blocking capability. Evaluate thermal resistance requirements against the 1.47 kW dissipation limit. Compare against single configurations like APTGT300SK170D3G if space constraints differ. Verify compatibility with existing gate drive circuits operating within the 20 V limit.
This part belongs to the APTGT series of IGBT modules from Microchip Technology. It shares the D3-11 package form factor with other variants in the lineup. The series targets medium to high power density applications requiring reliable switching performance under harsh industrial conditions.
Direct replacements include the APTGT300DA170D3G. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference datasheets for any differences in switching times or thermal resistance values.