SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APTGT300A60G is a single IGBT power module manufactured by Microchip Technology, designed for high-power switching applications. It features a 600 V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 430 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.4 V and supports a maximum power dissipation of 1.15 kW. It operates within a junction temperature range of -40°C to +100°C and utilizes an SP6 screw-mount package. The module incorporates silicon technology with a maximum gate-emitter voltage rating of 20 V.
Verify the specific ordering suffix and manufacturing date code upon purchase to ensure compliance with project requirements. Confirm RoHS status and assembly location details through official Microchip documentation or authorized distributors before finalizing procurement decisions.
Select this component for designs requiring a single high-current switch with 600 V blocking capability. Ensure the cooling system can handle the 1.15 kW power dissipation limit. Verify that the gate drive circuitry adheres to the 20 V maximum rating and matches the required switching speeds for the target application efficiency.
This module belongs to the APTGT series of trench field-stop IGBTs from Microchip Technology. It is part of a family of high-performance power modules designed to replace older generation devices, offering improved switching characteristics and lower conduction losses in compact packages.
Direct replacements may include other Microchip APTGT series modules with similar voltage and current ratings, such as the APTGT300SK60G or APTGT300DH60G, provided pin compatibility and thermal specifications match the existing design constraints.