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The APTGT300DA120D3G is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology in the D3-11 package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 440 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 1.45 kW. Operating within a temperature range of -40°C to +125°C, it supports screw mounting with a maximum gate-emitter voltage of 20 V and a leakage current of 400 nA.
Verify component authenticity through authorized Microchip distributors or official channels. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure proper handling procedures are followed due to the sensitivity of semiconductor junctions during installation and storage.
Select this module for high-current applications requiring robust voltage blocking capabilities. Evaluate thermal management requirements against the 1.45 kW dissipation limit. Compare performance metrics with alternative packages if space constraints differ from the D3-11 form factor.
This component belongs to the APTGT series of IGBT modules designed for high-power switching applications. The series emphasizes reliability and efficiency in industrial environments. Microchip Technology continues to support this line for critical infrastructure and energy conversion systems.
Consult official substitution lists for electrically equivalent parts. Verify pin compatibility and thermal characteristics when considering alternatives.