APTGT300DA120G

Overview

The APTGT300DA120G is a single IGBT module manufactured by Microchip Technology, designed for high-power switching applications. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 400 A at 25°C. The device utilizes silicon technology with a screw mount installation style in a D3-11 package. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 1.45 kW. The operational temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.

Feature Summary

• Single configuration IGBT module utilizing silicon technology
• High voltage capability rated for 1200 V collector-emitter operation
• Robust thermal performance supporting up to 1.45 kW power dissipation
• Wide operating temperature range suitable for demanding industrial environments

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Induction heating systems
• Welding equipment

Procurement Notes

Verify the specific datasheet revision and mechanical drawing compatibility before integration. Confirm that the D3-11 package dimensions match the intended heatsink interface. Ensure gate drive circuits are compatible with the specified 20 V maximum gate-emitter voltage limits. Check for any recent product change notices regarding material composition or manufacturing site changes.

Selection Notes

Select this component when a single IGBT configuration is required for high-voltage applications. The 1200 V rating provides sufficient headroom for standard three-phase AC line voltages. The 400 A current capacity supports moderate to high-power loads. Consider the D3-11 package size for PCB or chassis mounting constraints. Evaluate thermal management requirements based on the 1.45 kW dissipation rating under expected load conditions.

Part Context

This part belongs to Microchip's IGBT module portfolio, specifically within the PM-IGBT-TFS-D3 series. It represents a discrete power semiconductor solution distinct from intelligent power modules or dual configurations. The D3-11 package is a standardized form factor used across various current ratings in this family, facilitating design reuse for different power levels.

Replacement Considerations

Direct replacements must match the 1200 V rating, 400 A current, and D3-11 package. Verify pinout compatibility and thermal characteristics. Cross-reference with other Microchip single IGBT modules in the same series if availability is an issue.