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The Microchip Technology APTGT300DA170D3G is a single IGBT module utilizing silicon technology. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 400 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 1.47 kW, with a maximum gate-emitter voltage of 20 V. It operates within a temperature range of -40°C to +125°C and is housed in a D3-11 package designed for screw mounting.
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the D3-11 package dimensions match the target PCB or heatsink interface requirements. Ensure that the supply chain source provides valid traceability documentation consistent with the manufacturer's quality standards.
Select this component when a single-switch solution with 1.7 kV blocking capability and 400 A current handling is required. The D3-11 package facilitates efficient thermal management through direct screw mounting. Evaluate the 2 V saturation voltage against system efficiency targets and ensure the driving circuitry supports the specified 20 V gate-emitter voltage limits.
This part belongs to the PM-IGBT-TFS-D3 product family from Microchip Technology. It represents a discrete insulated-gate bipolar transistor module designed for robust power conversion environments. The D3-11 packaging standardizes mechanical integration across various high-power semiconductor solutions within the manufacturer's portfolio.
Direct substitutes include the APTGT300DA60D3G (600V variant) and the APTGT300A170D3G (dual configuration). Verify electrical compatibility and pinout alignment before substitution.