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The APTGT300DU60G is a dual IGBT module manufactured by Microchip Technology, utilizing silicon technology in an SP6 screw-mount package. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 430 A at 25°C. The saturation voltage (Vce(sat)) is 1.4 V, with a gate-emitter leakage current of 500 nA and a maximum gate-emitter voltage of 20 V. Power dissipation is rated at 1.15 kW, operating within a temperature range of -40°C to +100°C.
Verify the specific suffix G against official Microchip documentation to confirm RoHS compliance status and assembly site details. Confirm that the SP6 package dimensions match the mechanical constraints of the target heatsink interface. Ensure the gate drive circuitry supports the specified 20 V maximum rating and 500 nA leakage characteristics during operation.
Select this component when a dual IGBT configuration is required for 600 V applications with high current demands up to 430 A. The SP6 package offers a standardized footprint for thermal management solutions. Verify that the system's thermal design can handle the 1.15 kW power dissipation rating under worst-case operating conditions.
This part belongs to the APTGT series of high-power IGBT modules from Microchip Technology. The series utilizes trench field-stop technology to optimize switching performance and conduction losses. The SP6 package is designed for robust mechanical mounting and efficient heat transfer in industrial power electronics environments.
The APTGT300DH60G shares identical electrical specifications and the SP6 package, serving as a direct functional substitute. Both parts maintain the same 600 V rating, 430 A current capacity, and 1.4 V saturation voltage.