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The APTGT300H60G is a full-bridge IGBT power module utilizing Trench + Field Stop IGBT3 technology. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 430 A at 25°C, decreasing to 300 A at 80°C case temperature. The saturation voltage is typically 1.4 V at 25°C and 1.5 V at 150°C for a 300 A load. Maximum power dissipation reaches 1150 W at 25°C. The module operates within a junction temperature range of -40°C to 175°C and includes integrated soft recovery parallel diodes with a forward voltage of 1.5 V.
Verify the specific revision level against the latest Microchip Technology datasheet before integration. Confirm that the SP6 package mounting torque requirements are met during assembly. Ensure electrostatic discharge handling procedures are strictly followed as the device is sensitive to ESD. Validate thermal interface material compatibility for the specified operating temperatures.
Select this component for applications requiring high current density in a full-bridge topology. The positive temperature coefficient of VCE(sat) facilitates stable paralleling if higher currents are needed. Consider the 175°C maximum junction temperature for high-temperature environments. Verify gate resistance values to ensure switching losses remain within acceptable limits for the specific frequency requirements.
This module belongs to the APTGT series of full-bridge power modules manufactured by Microchip Technology. It utilizes the SP6 isolated package format, which allows direct mounting to heatsinks. The series is engineered for industrial power conversion applications where ruggedness and high integration levels are required.
No public confirmed substitute part numbers are available in the provided documentation.