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The APTGT30H170T3G is a silicon-based IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a full bridge configuration with a maximum collector-emitter voltage of 1700 V and a continuous collector current of 45 A at 25°C. The saturation voltage is 2.1 V, with a power dissipation rating of 210 W. Operating temperatures range from -40°C to +100°C, and it utilizes screw mount installation.
Verify the specific suffix 'T3G' against official Microchip documentation to confirm the exact pinout and internal configuration. Ensure that the required gate drive characteristics align with the module's specifications before procurement. Confirm RoHS compliance status through the manufacturer's latest release notes. Cross-reference the SP3-32 package dimensions with your mechanical design constraints to ensure proper fitment on the cooling solution.
Select this component when a 1700 V rating is required for high-power industrial applications. The full bridge topology simplifies circuit design for single-phase or three-phase inverter legs. Consider the 45 A current rating relative to your thermal management capabilities. The SP3-32 package offers a balance between current capacity and board space efficiency compared to larger modules.
This part belongs to the Microchip APTGT series of high-speed IGBT modules. These modules are designed for demanding power electronics environments, leveraging advanced trench field stop technology. The series provides reliable performance for applications requiring high voltage blocking capabilities and efficient switching characteristics in compact packages.
Consult Microchip's official cross-reference guides for direct replacements. Verify compatibility of mounting holes and terminal configurations if substituting with other SP3 variants. Ensure electrical parameters such as Vceo and Ic meet or exceed original requirements.