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Product Detailed Parameters
- Description：IGBT MODULE 600V 50A 90W SP3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：90 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：1.6 nF @ 25 V
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Overview
The APTGT30H60T3G is a silicon IGBT module manufactured by Microchip Technology, utilizing trench field-stop technology. It features a full bridge configuration with a maximum collector-emitter voltage of 600 V and a continuous collector current of 50 A at 25°C. The device has a typical saturation voltage of 1.5 V and a power dissipation rating of 90 W. It operates within a junction temperature range of -40°C to +175°C and uses an SP1-12 screw mount package.
Feature Summary
- Utilizes trench field-stop technology for optimized performance
- Features a full bridge inverter configuration
- Designed for high-speed switching applications
Applications
- High-frequency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the manufacturer designation carefully, as official documentation lists Microchip Technology rather than Microsemi Corporation. Confirm the specific suffix 'T3G' against the datasheet to ensure correct packaging and compliance status. Cross-reference the Mouser part number 494-APTGT30H60T3G for accurate sourcing details.
Selection Notes
Select this component for applications requiring a 600 V rated full bridge topology with moderate current handling capabilities. Ensure the thermal management system supports the 90 W power dissipation rating. Verify that the operating junction temperature remains within the specified -40°C to +175°C range during all operational phases.
Part Context
This module belongs to the APTGT series of high-speed IGBT modules from Microchip Technology. It shares the SP1-12 package form factor with other variants like the APTGT30H60T1G, though electrical characteristics may differ based on the specific internal chip configuration and intended application profile within the product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternatives based on matching voltage, current, and package specifications while verifying compatibility with existing gate drive requirements.
