APTGT30SK170T1G

Overview

The APTGT30SK170T1G is a single IGBT power module manufactured by Microsemi Corporation. It features a collector-emitter maximum voltage (VCEO) of 1.7 kV and a continuous collector current of 45 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and a power dissipation rating of 210 W. It operates within a temperature range of -40°C to +100°C and utilizes the SP1-12 screw mount package.

Feature Summary

• Single IGBT configuration with Trench Field Stop technology
• High voltage capability rated at 1.7 kV
• Screw mount installation style for secure mechanical attachment

Applications

• Boost chopper circuits
• Industrial motor drives
• Power conversion systems

Procurement Notes

Verify component authenticity through authorized channels as this part may be discontinued. Confirm package integrity and pin alignment prior to installation. Ensure thermal interface materials are compatible with the SP1-12 housing. Review datasheet revisions for any parameter updates before final design approval.

Selection Notes

Select this module for applications requiring high voltage isolation and moderate current handling. The SP1-12 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements against the 210 W dissipation limit. Consider gate drive compatibility with standard IGBT control signals.

Part Context

This component belongs to the APTGT series of Trench Field Stop IGBT modules from Microsemi. The series provides robust performance for medium-power industrial applications. The SP1-12 package is a standardized form factor used across various current ratings in the product line, facilitating modular design approaches.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data directly from manufacturer resources if alternative sourcing is required.