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Product Detailed Parameters
- Description：IGBT MODULE 600V 50A 90W SP3
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：90 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：1.6 nF @ 25 V
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Overview
The APTGT30TL60T3G is a Trench Field Stop IGBT power module manufactured by Microsemi Corporation. It is designed for three-level inverter configurations and operates with a maximum collector-emitter voltage of 600V. The module features a SP3 package type, suitable for chassis mounting applications. This component integrates high-speed IGBT4 technology to achieve low voltage drop and reduced switching losses, optimizing efficiency in power conversion systems.
Feature Summary
- Utilizes Trench Field Stop IGBT technology for enhanced performance
- Optimized for three-level inverter topologies
- Designed for low conduction and switching losses
Applications
- Three-level inverter systems
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-efficiency power conversion units
Procurement Notes
Verify the specific manufacturer designation, as Microsemi assets are now part of Microchip Technology. Confirm the package style matches the required thermal management solution. Ensure the voltage rating aligns with the system's DC bus requirements. Check for RoHS compliance documentation if environmental regulations apply. Validate the pinout configuration against the target PCB or chassis design before integration.
Selection Notes
Select this module when designing three-level inverter circuits requiring robust voltage handling at 600V. Consider its thermal characteristics for chassis mounting scenarios. Evaluate the trade-off between conduction losses and switching speed for the specific application frequency. Ensure the drive circuitry supports the gate charge requirements of the Trench Field Stop structure. Compare thermal resistance values against available heatsinking options.
Part Context
This component belongs to the APTGT series of IGBT modules from Microsemi, now under Microchip Technology. The series focuses on high-efficiency power solutions using advanced trench field stop technology. These modules are engineered to replace older generation devices in demanding industrial applications, offering improved reliability and reduced energy consumption in modern power electronics architectures.
Replacement Considerations
Public confirmed substitute part numbers are not provided in the available documentation. Verify compatibility with existing gate drivers and thermal interfaces when considering alternative models within the same product family.
