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Product Detailed Parameters
- Description：IGBT MODULE 1200V 55A 208W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 35A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：55 A
- Power - Max：208 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.5 nF @ 25 V
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Overview
The APTGT35A120T1G is a single IGBT power module with an integrated anti-parallel diode, utilizing Fast Trench + Field Stop technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 35 A at 80°C case temperature. The package includes an internal NTC thermistor for thermal monitoring. Key electrical parameters include a saturation voltage of 2.1 V at 35 A and 25°C, and a maximum power dissipation of 208 W. The junction-to-case thermal resistance is 0.60 °C/W for the IGBT and 0.95 °C/W for the diode.
Feature Summary
- Fast Trench + Field Stop IGBT technology providing low voltage drop and low tail current
- Integrated internal NTC thermistor for precise temperature monitoring
- Soft recovery parallel diodes with low forward voltage and leakage current
- Symmetrical design ensuring very low stray inductance
Applications
- Welding converters
- Switched Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Motor control systems
Procurement Notes
Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm RoHS compliance status through the supplier's documentation. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive semiconductor components.
Selection Notes
Select this module for applications requiring high-frequency operation up to 20 kHz. Consider the SP1 package dimensions and screw mounting requirements for mechanical integration. Evaluate the thermal management needs based on the specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the ±20 V absolute maximum rating.
Part Context
This component belongs to the Microsemi APTGT series of single IGBT modules. It utilizes the SP1 isolated package format designed for direct heatsink mounting. The product line focuses on industrial power electronics applications requiring robust performance and high switching frequencies.
Replacement Considerations
Consult official Microchip/Microsemi cross-reference lists for verified substitutes. Verify that any replacement matches the 1200V voltage rating, 35A current capacity, and SP1 package outline. Ensure equivalent thermal characteristics and switching speeds are maintained for circuit compatibility.
