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The APTGT400TL65G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP6 screw-mount package. It features a single configuration with a maximum collector-emitter voltage of 650 V and a continuous collector current of 500 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 1.15 kW. Operating within a temperature range of -40°C to +100°C, it includes a gate-emitter leakage current of 1.2 uA and a maximum gate-emitter voltage of 20 V.
Verify the specific suffix 'TL' against official Microchip documentation to confirm exact binning or testing variations. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure the SP6 package dimensions match the target heatsink interface requirements before finalizing procurement orders.
Select this component for circuits requiring 650 V blocking capability with high continuous current handling. Evaluate thermal resistance characteristics against the expected ambient conditions to ensure the junction temperature remains within the specified operational limits. Verify that the drive circuit can supply the necessary gate charge without exceeding the 20 V maximum rating.
This module belongs to the APTGT series of high-power IGBT modules from Microchip Technology. The series is characterized by its use of advanced silicon technology to deliver high efficiency in power conversion systems. The SP6 package provides a reliable mechanical solution for mounting on standard cooling structures in industrial environments.
Direct substitutes must match the 650 V rating, 500 A current capacity, and SP6 package form factor. Verify pinout compatibility and thermal interface specifications before swapping components.