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The APTGT50A1202G is a half-bridge IGBT module utilizing Trench Field Stop technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 75 A at case temperature. The module has a maximum power dissipation of 277 W and operates within a junction temperature range of -40°C to +150°C. It uses the SP2 package for chassis mounting.
Verify component status as obsolete or end-of-life through official Microchip channels. Confirm availability of last-time buy options if production continuity is required. Ensure compatibility with existing thermal management solutions designed for the SP2 package footprint.
Select this module for applications requiring high voltage isolation and efficient switching performance. Consider the 75 A current rating and 277 W power dissipation limits when designing heat sinks. Verify gate drive requirements align with the specific electrical characteristics of the Trench Field Stop technology.
This component belongs to Microsemi's high-power discrete and module portfolio, specifically designed for robust industrial applications. The SP2 package provides a standardized form factor for chassis mounting, facilitating integration into larger power conversion systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Microchip resources for potential obsolescence management strategies or alternative product lines.