APTGT50A120T1G

Overview

The APTGT50A120T1G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 75 A at 25°C. The device has a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 277 W. It operates within a temperature range of -40°C to +100°C and uses an SP4 screw-mount package.

Feature Summary

• Single configuration IGBT module
• Screw mount installation style
• SP4 package format

Applications

Procurement Notes

Verify the exact part number against official Microchip documentation before procurement. Confirm that the suffix T1G corresponds to the specific variant required for your design. Check for any recent product change notices or obsolescence announcements from the manufacturer to ensure long-term availability and specification consistency.

Selection Notes

Select this component when a single IGBT with 1.2 kV blocking capability and 75 A continuous current is needed. Ensure the thermal management system can handle the 277 W power dissipation. Verify that the SP4 package dimensions and screw mounting requirements fit the mechanical constraints of the target application board or heatsink assembly.

Part Context

This part belongs to the Microchip Technology IGBT module family. It is designed for high-power switching applications requiring robust voltage handling. The SP4 package provides a standardized form factor for industrial power electronics. It represents a specific configuration within the broader portfolio of silicon-based insulated gate bipolar transistors offered by the manufacturer.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.