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Product Detailed Parameters
- Description：IGBT MODULE 1700V 75A 312W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：312 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：4.4 nF @ 25 V
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Overview
The APTGT50A170T1G is a dual IGBT power module manufactured by Microchip Technology, utilizing silicon trench field-stop technology. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.3 V under specified conditions. Designed for high-temperature operation, it supports a junction temperature range from -40°C to +175°C with a maximum power dissipation of 268 W. The module employs screw mount installation within the SP1 package configuration.
Feature Summary
- Incorporates trench field-stop IGBT4 technology for optimized switching performance
- Integrated NTC thermistor for precise thermal monitoring
- High-temperature capability supporting junction temperatures up to 175°C
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component matches the required SP1 package dimensions and pinout configuration for your PCB or busbar design. Ensure compatibility with recommended gate drive voltages and thermal interface materials for reliable long-term operation in your target application environment.
Selection Notes
Select this module for applications requiring robust 1700 V blocking capability with moderate current handling. Compare the 2.3 V saturation voltage against system efficiency targets. Verify that the 50 A current rating aligns with peak load requirements while accounting for derating factors at elevated operating temperatures above 25°C case temperature.
Part Context
This component belongs to Microchip's APTGT series of high-speed IGBT modules. It shares the SP1 mechanical footprint with other variants in the family but differs in voltage and current ratings. The series utilizes advanced trench field-stop technology to balance conduction losses and switching speeds for efficient power conversion.
Replacement Considerations
Direct replacements must match the 1700 V rating, 50 A current capacity, and SP1 package outline. Verify electrical parameters such as Vce(sat) and switching times to ensure circuit compatibility. Check for equivalent thermal resistance values to maintain existing cooling solutions.
